ISSN: 1304-7191 | E-ISSN: 1304-7205
Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence
1Department of Physics, Faculty of Arts and Sciences, Gazi University, Ankara, 06560, Türkiye
2Department of Electric and Energy, Vocational School of Technical Sciences, Manisa Celal Bayar University, Manisa, 06560, Türkiye
3Department of Environmental Engineering, Faculty of Engineering, Giresun University, Giresun, 28200, Türkiye
Sigma J Eng Nat Sci 2023; 41(1): 84-92 DOI: 10.14744/sigma.2023.00009
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The fabricated Al/ Naphthalimide /p-Si Schottky diode’s dielectrical parameters and series resistance effect have been investigated by using the DC and AC measurements. We have developed a facile interface structure that consisted of double-layer films in order to investigate the capacitance volume and series resistance effect through the device. The organic interlayer with little nanometer thickness between electrode and inorganic semiconductor drastically reduce the series resistance at the interface. The dielectric parameters have increased with decreasing frequency. Interestingly, the value of ε´ (≈3) even at 1 kHz shows that the prepared naphthalimide (with Thiophene property) nano-interlayer can provide more charges or energy storage ability and so it can be used instead of traditional interfacial layers.