MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements.
Bipolar injection set on just of forward bias,VF, 1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage
measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.