ISSN: 1304-7191 | E-ISSN: 1304-7205
Modeling and analysis of schottky diode bridge and JFET based liénard oscillator circuit
1Department of Electronics and Communication Engineering, Tekirdag Namik Kemal University, Tekirdag, 59500, Türkiye
Sigma J Eng Nat Sci 2024; 42(2): 503-515 DOI: 10.14744/sigma.2022.00082
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Abstract

Liénard Oscillator circuit has numerous variations. Nowadays, due to the developments of semiconductor technology, such an oscillator can be made using various semiconductor circuit elements. In this study, it has been shown that a Liénard Oscillator can also be made using a Schottky diode bridge and a JFET based nonlinear resistor. First, the new Liénard Oscillator topology is given, then, the dynamic model of the circuit is derived, and the simulations of the circuit are made. The currents, voltages and limit cycle of the Liénard Oscillator circuit are obtained with simulations using LTspice circuit analysis program. The simulations have confirmed that the circuit operates as a Liénard Oscillator.